Transistor: N-MOSFET x2; unipolar; 30V; 200mA; Idm: 0.8A; 200mW DIODES INCORPORATED

Product Code: DMN33D9LV-7A
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Delivery terms

Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail

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home delivery

Home delivery in Lithuania

Home delivery in Lithuania

After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Lithuania please use www.lemona-electronics.eu to order.

Over €30.00

(Orders up to 1000 kgs)

For free

To €30.00

(Orders up to 3 kgs)

€2.99

To €30.00

(Orders up to 1000 kgs)

€3.59

Shipping parcel

Delivery to a DPD Pickup location

Delivery to a DPD Pickup location

After handing over the goods to the courier, we will inform you by e-mail. Orders over €30.00 are delivered free of charge.

€1.99

Product description

Transistor: N-MOSFET x2; unipolar; 30V; 200mA; Idm: 0.8A; 200mW DIODES INCORPORATED

Specifications

SKU
U-2876185
Product code
DMN33D9LV-7A

Supplier product description

Transistor: N-MOSFET x2; unipolar; 30V; 200mA; Idm: 0.8A; 200mW

Supplier parameters

Product code
DMN33D9LV-7A
Brand
DIODES INCORPORATED
Supplier's product code
DMN33D9LV-7A
Product ID
U-2876185
Case
SOT563
Drain current
0.2A
Drain-source voltage
30V
Gate charge
1.23nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
DIODES INCORPORATED
Mounting
SMD
On-state resistance
Polarisation
unipolar
Power dissipation
0.2W
Pulsed drain current
0.8A
Type of transistor
N-MOSFET x2
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].