Transistor: P-MOSFET; unipolar; -30V; -13.9A; Idm: -60A; 33W VISHAY
Product Code: SI7617DN-T1-GE3
Brand
More similar products
Delivery terms
2024-05-16 Estimated delivery
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 2890 pcs | Supplier Warehouse |
Home delivery in Lithuania
Home delivery in Lithuania
After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Lithuania please use www.lemona-electronics.eu to order.
Over €30.00 (Orders up to 1000 kgs) | For free |
To €30.00 (Orders up to 3 kgs) | €2.99 |
To €30.00 (Orders up to 1000 kgs) | €3.59 |
Delivery to a DPD Pickup location
Delivery to a DPD Pickup location
After handing over the goods to the courier, we will inform you by e-mail. Orders over €30.00 are delivered free of charge.
€1.99
Supplier product description
Transistor: P-MOSFET; unipolar; -30V; -13.9A; Idm: -60A; 33W
Supplier parameters
NomNr
SI7617DN-T1-GE3
Supplier's product code
SI7617DN-T1-GE3
Product ID
U-3126036
Case
PowerPAK® 1212-8
Drain current
-13.9A
Drain-source voltage
-30V
Gate charge
59nC
Gate-source voltage
±25V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
12.3mΩ
Polarisation
unipolar
Power dissipation
33W
Pulsed drain current
-60A
Type of transistor
P-MOSFET
Brand
VISHAY
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
