Transistor: N-MOSFET; SiC; unipolar; 650V; 36A; Idm: 97A; 208W LUGUANG ELECTRONIC
Product Code: LGE3M60065Q
Brand
More similar products
Delivery terms
2024-06-13 Estimated delivery
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery in Lithuania
Home delivery in Lithuania
After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Lithuania please use www.lemona-electronics.eu to order.
Over €30.00 (Orders up to 1000 kgs) | For free |
To €30.00 (Orders up to 3 kgs) | €2.99 |
To €30.00 (Orders up to 1000 kgs) | €3.59 |
Delivery to a DPD Pickup location
Delivery to a DPD Pickup location
After handing over the goods to the courier, we will inform you by e-mail. Orders over €30.00 are delivered free of charge.
€1.99
Product description
Brand
Transistor: N-MOSFET; SiC; unipolar; 650V; 36A; Idm: 97A; 208W LUGUANG ELECTRONIC
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 650V; 36A; Idm: 97A; 208W
Useful information
Supplier parameters
Product code
LGE3M60065Q
Case
TO247-4
Drain current
36A
Drain-source voltage
650V
Features of semiconductor devices
Kelvin terminal
Gate charge
78nC
Gate-source voltage
-4...18V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
LUGUANG ELECTRONIC
Mounting
THT
On-state resistance
75mΩ
Polarisation
unipolar
Power dissipation
208W
Pulsed drain current
97A
Technology
SiC
Type of transistor
N-MOSFET
Brand
LUGUANG ELECTRONIC
Supplier's product code
LGE3M60065Q
Product ID
U-3846317
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
